Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy
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Date
2003
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Montana State University - Bozeman, College of Letters & Science
Abstract
There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4f N-15d and 4f N+1 states were determined. While the 4f N ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4f N-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4f N, 4f N-15d, and 4f N+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence stability. All of these results lead to a clearer picture for the host's effect on the rare-earth ion's electron binding energies and will motivate fundamental theoretical analysis and accelerate the development of new optical materials.