Electronic and atomic structure of wide band gap GaN and thin aluminum adlayer studied with synchrotron radiation

Chen, Cui2015-05-122015-05-121998https://scholarworks.montana.edu/handle/1/7812enWide gap semiconductorsSemiconductor-metal boundariesDiodes, Schottky-barrierSynchrotron radiationElectronic and atomic structure of wide band gap GaN and thin aluminum adlayer studied with synchrotron radiationDissertationCopyright 1998 by Cui Chen