Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1/3Nb2/3)1-xTixO3 crystal
Schmidt, V. Hugo
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This work investigates dielectric and photovoltaic behaviors in Pb(Mg1∕3Nb2∕3)0.64Ti0.36O3single crystaldoped with 0.5mol% WO3. Dielectric permittivities measured as functions of temperature and frequency reveal two first-order-type phase transitions upon heating and cooling. The photovoltaic response strongly depends on illumination wavelength, sample thickness, and prior electric-field poling. The relation of photovoltage and light intensity under near-ultraviolet (λ=406nm)illumination for the poled samples can be expressed by an exponential equation. Optical transmission reveals that the cutoff wavelength is near 400nm and indicates a minimum electronic energy gap of ∼3.0eV.
C.-S. Tu, F.-T. Wang, R.R. Chien, V.H. Schmidt, C.-M. Hung, and C.-T. Tseng, “Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1/3Nb2/3)1-xTixO3 crystal,” Appl. Phys. Lett. 88, 032902 (2006).