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dc.contributor.authorTu, Chi-Shun
dc.contributor.authorWang, F.-T.
dc.contributor.authorChien, R.R.
dc.contributor.authorSchmidt, V. Hugo
dc.contributor.authorTseng, C.-T.
dc.date.accessioned2016-12-07T18:51:30Z
dc.date.available2016-12-07T18:51:30Z
dc.date.issued2006
dc.identifier.citationC.-S. Tu, F.-T. Wang, R.R. Chien, V.H. Schmidt, C.-M. Hung, and C.-T. Tseng, “Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1/3Nb2/3)1-xTixO3 crystal,” Appl. Phys. Lett. 88, 032902 (2006).en_US
dc.identifier.issn0003-6951
dc.identifier.urihttps://scholarworks.montana.edu/xmlui/handle/1/12338
dc.description.abstractThis work investigates dielectric and photovoltaic behaviors in Pb(Mg1∕3Nb2∕3)0.64Ti0.36O3single crystaldoped with 0.5mol% WO3. Dielectric permittivities measured as functions of temperature and frequency reveal two first-order-type phase transitions upon heating and cooling. The photovoltaic response strongly depends on illumination wavelength, sample thickness, and prior electric-field poling. The relation of photovoltage and light intensity under near-ultraviolet (λ=406nm)illumination for the poled samples can be expressed by an exponential equation. Optical transmission reveals that the cutoff wavelength is near 400nm and indicates a minimum electronic energy gap of ∼3.0eV.en_US
dc.language.isoen_USen_US
dc.titleDielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1/3Nb2/3)1-xTixO3 crystalen_US
dc.typeArticleen_US
mus.citation.extentfirstpage32902.1en_US
mus.citation.extentlastpage32902.3en_US
mus.citation.issue3en_US
mus.citation.journaltitleApplied Physics Lettersen_US
mus.citation.volume88en_US
mus.identifier.categoryPhysics & Mathematicsen_US
mus.identifier.doihttp://dx.doi.org/10.1063/1.2165278en_US
mus.relation.collegeCollege of Letters & Scienceen_US
mus.relation.departmentPhysics.en_US
mus.relation.universityMontana State University - Bozemanen_US


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