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dc.contributor.authorHung, C.-M.
dc.contributor.authorTu, Chi-Shun
dc.contributor.authorXu, Zhe-Rui
dc.contributor.authorSchmidt, V. Hugo
dc.contributor.authorChien, R. R.
dc.date.accessioned2019-02-08T18:35:41Z
dc.date.available2019-02-08T18:35:41Z
dc.date.issued2014
dc.identifier.citationC.-M. Hung, C.-S. Tu, Z.-R. Xu, V.H. Schmidt, and R.R. Chien, “Photo-induced electric responses in heterostructure of indium tin oxide/(Bi 1-x Ca x FeO 3-δ /Au,” IEEE Transactions on Magnetics 50, 1001804 (2014). doi: 10.1109/TMAG.2014.2327663.en_US
dc.identifier.issn0018-9464
dc.identifier.urihttps://scholarworks.montana.edu/xmlui/handle/1/15226
dc.description.abstractPhotovoltaic effects in heterostructure of indium tin oxide (ITO)/(Bi 1_x Ca x )FeO 3_δ multiferroic ceramics/Au (x = 0.0 and 0.15) have been measured under illuminations of λ = 405 and 445 nm. Open-circuit voltage (Voc), short-circuit current density (Jsc), and power conversion efficiency (η) show strong dependences on light wavelength and intensity. For λ = 405 nm, V oc and J sc can reach 0.62 V and 0.042 A/m 2 for BiFeO 3 (BFO), and 0.48 V and 0.30 A/m 2 for (Bi 0.85 Ca 0.15 )FeO 2.925 (BFO-15%Ca) at I N 9.1×10 2 W/m 2 . The maximum power conversion efficiency for λ = 405 nm can reach η N 0.002% for BFO and η N 0.0035% for BFO-15%Ca, which are comparable with 0.0025% observed in graphene/polycrystalline BFO/Pt films. A model based on forward p-n junction, reverse p-n junction and photo-excited currents in the interface between ITO film and (Bi 1_x Ca x )FeO 3_δ ceramic, was developed to describe Voc and Jsc as a function of incident light intensity. The theoretical fits agree well with experimental results. The depletion-region widths for λ = 405 nm were calculated as a function of light intensity. The calculated depletion-region widths without illumination are do N 210 nm in BFO and do N 340 nm in BFO-15%Ca.en_US
dc.description.sponsorshipNational Science Council of Taiwan under Grant 100-2112-M-030-002-MY3en_US
dc.language.isoenen_US
dc.rightsThis Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).en_US
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en_US
dc.titlePhoto-induced electric responses in heterostructure of indium tin oxide/(Bi 1-x Ca x FeO 3-δ /Au,en_US
dc.typeArticleen_US
mus.citation.extentfirstpage1en_US
mus.citation.extentlastpage4en_US
mus.citation.issue11en_US
mus.citation.journaltitleIEEE Transactions on Magneticsen_US
mus.citation.volume50en_US
mus.identifier.categoryPhysics & Mathematicsen_US
mus.identifier.doi10.1109/TMAG.2014.2327663en_US
mus.relation.collegeCollege of Letters & Scienceen_US
mus.relation.departmentPhysics.en_US
mus.relation.universityMontana State University - Bozemanen_US
mus.data.thumbpage3en_US


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