Show simple item record

dc.contributor.advisorDickensheets, David
dc.contributor.authorOliver, Kyle
dc.descriptionAbstract Onlyen_US
dc.description.abstractIn this paper we describe a process for creating thin SU-8 2002 films between 1.5 μm and 3.0 μm thick that are hard-baked and can withstand a release etch in either aqueous or plasma silicon etchants. Resulting films are characterized using both wafer bow and membrane bulge tests to monitor in-plane stress and Young’s modulus. We explore the influence on final film stress of several process variables including hard bake temperature, exposure dose, film thickness, and various temperature profiles. We observe resultant film stress in the range of 13.8 to 32 MPa, and Young’s modulus in the range of 2.1 to 5.2 GPa for free-standing membranes. Illustrative process recipes are described for both patterned and un-patterned SU-8 2002 membrane devices.en_US
dc.titleStress engineering for free-standing SU-8 2002 thin film devicesen_US
mus.citation.conferenceMSU Student Research Celebration 2012
mus.relation.collegeCollege of Engineering
mus.relation.departmentElectrical & Computer Engineering.en_US
mus.relation.universityMontana State University - Bozemanen_US

Files in this item


This item appears in the following Collection(s)

Show simple item record

MSU uses DSpace software, copyright © 2002-2017  Duraspace. For library collections that are not accessible, we are committed to providing reasonable accommodations and timely access to users with disabilities. For assistance, please submit an accessibility request for library material.