Proton Glass Dielectric Susceptibility Compared with Monte Carlo and Bound Charge Semiconductor Model Predictions
Schmidt, V. Hugo
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Our latest results for dielectric permittivity and loss and protonic conductivity in RADP, RADA and DRADA proton glasses are presented. Improvements in our “bound charge semiconductor” model for dielectric behavior are discussed. Monte Carlo studies of the phase diagram and polarization decay are described. Bias order parameter vs. temperature plots from the simulation and from ND4 deuteron NMR lineshapes are compared.
Schmidt, V. H., Z. Trybula, D. He, J. E. Drumheller, C. Stigers, Z. Li, and F. L. Howell. “Proton Glass Dielectric Susceptibility Compared with Monte Carlo and Bound Charge Semiconductor Model Predictions.” Ferroelectrics 106, no. 1 (June 1, 1990): 119–124. doi:10.1080/00150199008214569.