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dc.contributor.authorSchmidt, V. Hugo
dc.contributor.authorTrybula, Z.
dc.contributor.authorHe, Di
dc.contributor.authorDrumheller, John E.
dc.contributor.authorStigers, C.
dc.contributor.authorLi, Zhouning
dc.contributor.authorHowell, Francis L.
dc.date.accessioned2016-04-11T18:21:32Z
dc.date.available2016-04-11T18:21:32Z
dc.date.issued1990-06-01
dc.identifier.citationSchmidt, V. H., Z. Trybula, D. He, J. E. Drumheller, C. Stigers, Z. Li, and F. L. Howell. “Proton Glass Dielectric Susceptibility Compared with Monte Carlo and Bound Charge Semiconductor Model Predictions.” Ferroelectrics 106, no. 1 (June 1, 1990): 119–124. doi:10.1080/00150199008214569.en_US
dc.identifier.issn0015-0193
dc.identifier.urihttps://scholarworks.montana.edu/xmlui/handle/1/9671
dc.description.abstractOur latest results for dielectric permittivity and loss and protonic conductivity in RADP, RADA and DRADA proton glasses are presented. Improvements in our “bound charge semiconductor” model for dielectric behavior are discussed. Monte Carlo studies of the phase diagram and polarization decay are described. Bias order parameter vs. temperature plots from the simulation and from ND4 deuteron NMR lineshapes are compared.en_US
dc.titleProton Glass Dielectric Susceptibility Compared with Monte Carlo and Bound Charge Semiconductor Model Predictionsen_US
dc.typeArticleen_US
mus.citation.extentfirstpage119en_US
mus.citation.extentlastpage124en_US
mus.citation.issue1en_US
mus.citation.journaltitleFerroelectricsen_US
mus.citation.volume106en_US
mus.identifier.categoryChemical & Material Sciencesen_US
mus.identifier.categoryPhysics & Mathematicsen_US
mus.identifier.doi10.1080/00150199008214569en_US
mus.relation.collegeCollege of Letters & Scienceen_US
mus.relation.departmentPhysics.en_US
mus.relation.universityMontana State University - Bozemanen_US
mus.data.thumbpage6en_US


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