Electronic and atomic structure of wide band gap GaN and thin aluminum adlayer studied with synchrotron radiation

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dc.contributor.authorChen, Cuien
dc.date.accessioned2015-05-12T20:33:25Z
dc.date.available2015-05-12T20:33:25Z
dc.date.issued1998en
dc.identifier.urihttps://scholarworks.montana.edu/handle/1/7812en
dc.language.isoenen
dc.publisherMontana State University - Bozeman, College of Letters & Scienceen
dc.rights.holderCopyright 1998 by Cui Chenen
dc.subject.lcshWide gap semiconductorsen
dc.subject.lcshSemiconductor-metal boundariesen
dc.subject.lcshDiodes, Schottky-barrieren
dc.subject.lcshSynchrotron radiationen
dc.titleElectronic and atomic structure of wide band gap GaN and thin aluminum adlayer studied with synchrotron radiationen
dc.typeDissertationen
thesis.catalog.ckey367577en
thesis.degree.departmentPhysics.en
thesis.degree.genreDissertationen
thesis.degree.namePhDen
thesis.format.extentfirstpage1en
thesis.format.extentlastpage187en

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