Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

dc.contributor.authorLee, Eunji
dc.contributor.authorDhakal, Krishna Prasad
dc.contributor.authorSong, Hwayoung
dc.contributor.authorChoi, Heenang
dc.contributor.authorChung, Taek‐Mo
dc.contributor.authorOh, Saeyoung
dc.contributor.authorYoung Jeong, Hu
dc.contributor.authorMarmolejo‐Tejada, Juan M.
dc.contributor.authorMosquera, Martín A.
dc.contributor.authorLoc Duong, Dinh
dc.contributor.authorKang, Kibum
dc.contributor.authorKim, Jeongyong
dc.date.accessioned2023-10-31T19:37:04Z
dc.date.available2023-10-31T19:37:04Z
dc.date.issued2023-08
dc.descriptionThis is the peer reviewed version of the following article: [Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2. Advanced Optical Materials (2023)], which has been published in final form at https://doi.org/10.1002/adom.202301355. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions: https://authorservices.wiley.com/author-resources/Journal-Authors/licensing/self-archiving.html#3.en_US
dc.description.abstractGermanium diselenide (GeSe2) is a 2D semiconductor with air stability, a wide bandgap, and anisotropic optical properties. The absorption and photoluminescence (PL) of single-crystalline 2D GeSe2 grown by metal-organic chemical vapor deposition and their dependence on temperature and polarization are studied. The PL spectra exhibit peaks at 2.5 eV (peak A) and 1.8 eV (peak B); peak A displays a strongly polarized emission along the short axis of the crystal, and peak B displays a weak polarization perpendicular to that of peak A. With increasing temperature, peak B shows anomalous behaviors, i.e., an increasing PL energy and intensity. The excitation energy-dependent PL, time-resolved PL, and density functional theory calculations suggest that peak A corresponds to the band-edge transition, whereas peak B originates from the inter-band mid-gap states caused by selenium vacancies passivated by oxygen atoms. The comprehensive study on the PL of single-crystalline GeSe2 sheds light on the origins of light emission in terms of the band structure of anisotropic GeSe2, making it beneficial for the corresponding optoelectronic applications.en_US
dc.identifier.citationLee, E., Dhakal, K. P., Song, H., Choi, H., Chung, T.-M., Oh, S., Jeong, H. Y., Marmolejo-Tejada, J. M., Mosquera, M. A., Duong, D. L., Kang, K., Kim, J., Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal-Organic Chemical Vapor Deposition-Grown GeSe2. Adv. Optical Mater. 2023, 2301355. https://doi.org/10.1002/adom.202301355en_US
dc.identifier.issn2195-1071
dc.identifier.urihttps://scholarworks.montana.edu/handle/1/18173
dc.language.isoen_USen_US
dc.publisherWileyen_US
dc.rightscopyright Wiley 2023en_US
dc.rights.urihttps://web.archive.org/web/20200106202133/https://onlinelibrary.wiley.com/library-info/products/price-listsen_US
dc.rights.urihttp://web.archive.org/web/20190530141919/https://authorservices.wiley.com/author-resources/Journal-Authors/licensing/self-archiving.htmlen_US
dc.subjectMOCVDen_US
dc.subjectGeSe2en_US
dc.subjectSe-vacancyen_US
dc.subjectphotoluminescenceen_US
dc.subjectpolarizationen_US
dc.subject2D materialsen_US
dc.titleAnomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2en_US
dc.typeArticleen_US
mus.citation.extentfirstpage1en_US
mus.citation.extentlastpage23en_US
mus.citation.journaltitleAdvanced Optical Materialsen_US
mus.identifier.doi10.1002/adom.202301355en_US
mus.relation.collegeCollege of Letters & Scienceen_US
mus.relation.departmentChemistry & Biochemistry.en_US
mus.relation.universityMontana State University - Bozemanen_US

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